Marjorie Ann Olmstead

Address:      Department of Physics                                              Phone:         206-685-3031
Box 351560                                                            Facsimile:       206-685-0635
University of Washington                                      Internet:       olmstd@uw.edu
Seattle, WA  98195-1560  USA                            

Personal Information:

o   United States Citizen.

o   Married, two children (born 1995, 1997).

Education

o   Ph.D. in Physics, University of California at Berkeley.  1985.
Thesis:  Optical Properties and Atomic Structure of Cleaved Silicon and Germanium (111) Sur­faces as Determined by Photothermal Displacement Spectroscopy

o   M.A. in Physics, University of California at Berkeley.  1982.

o   B.A. in Physics with Highest Honors, Swarthmore College.  1979.

Professional Experience           

o   University of Washington, Seattle.

Š             Associate Chair of Physics for Undergraduate Affairs:  2009 – present.

Š             Director, Nanotechnology Ph.D. Program:  2004 – present.

Š             Professor of Physics and Adjunct Professor of Chemistry: 1997 ­– present.

Š             Associate Professor of Physics and Adjunct Associate Professor of Chemistry: 1993 – 1997.

Š             Assistant Professor of Physics and Adjunct Assistant Professor of Chemistry: 1991 – 1993.

o   Technische Universität Darmstadt, Germany. 

Š             Visiting Scientist, Fachbereich Materialswissenschaften:  April 2000 – July 2000.

o   Forschungszentrum Jülich, Germany. 

Š             Visiting Scientist, Institüt für Festkörperforschung:  October 1999 - March 2000.

o   University of California, Berkeley.

Š             Assistant Professor of Physics: 1986-1990;

Š             Faculty Scientist, Lawrence Berkeley Laboratory: 1988-1992.

o   Xerox Corporation, Palo Alto Research Center.

Š             Member of Research Staff, General Sciences Laboratory: 1985-1986;

Š             Consultant: 1986-1992.

Professional Awards

o   2003  UW Society of Physics Students Undergraduate Teaching Award.

o   2003  Fellow, American Physical Society.
Citation:  "For innovative studies of interface formation between dissimilar materials, especially the competition between thermodynamic and kinetic constraints in controlling morphologies and properties of heterostructures."

o   2000  Alexander von Humboldt Forschungspreis für ausländische Spitzenwissenschaftler

o   1999  UW Society of Physics Students Undergraduate Teaching Award.

o   1996  American Physical Society Maria Goeppert-Mayer Award.
Citation:  “For her innovative application of electron spectroscopies to surfaces and interfaces that has elucidated the importance of interfacial reactions on the structure, properties and morphology of both the interface and growing film in systems involving dissimilar materials, especially when heteroepitaxy is involved”

o   1994  Fellow, American Vacuum Society.

o   1994  American Vacuum Society Peter Mark Memorial Award.
Citation:  For elucidating the nature of semiconductor surfaces and the heteroepitaxial growth of insulating materials on these surfaces.”

o   1989  Department of Energy 2% Initiative Competition.

o   1987  National Science Foundation Presidential Young Investigator Award..

o   1986 and 1987 IBM Faculty Development Award.

Awards to Students Under Professor Olmstead's Supervision

o   2009 Pacific Northwest AVS Best Student Presentation Award.  Awarded to Esmeralda Yitamben.

o   2007 University of Washington Physics Department Karrer Prize.  Awarded to Tracy Lovejoy.

o   2007 - 2008 Nanotechnology IGERT Traineeship Award.  Awarded to Tracy Lovejoy.

o   2007 IBM Graduate Fellowship.  Awarded to Esmeralda Yitamben.

o   2006 American Vacuum Society Pacific Northwest Chapter Best Student Presentation Award. Awarded to Claire Lu.

o   2006 - 2007 Nanotechnology IGERT Traineeship Award.  Awarded to Tracy Lovejoy.

o   2005 UW Nanotechnology Fellows Student Presentation Award.  Awarded to Diedrich Schmidt.

o   2004  Nanoscale Science and Technology Workshop Best Student Presentation Award.  Awarded to Diedrich Schmidt.

o   2001-2005 UW-PNNL Joint Institute for Nanoscience Graduate Fellowship.  Awarded to Diedrich Schmidt.

o   2002-2004 University Initiatives Fund Graduate Fellowship in Nanotechnology.  Awarded to Taisuke Ohta.

o   2002 American Vacuum Society Pacific Northwest Chapter Best Student Presentation Award. Awarded to Aaron Bostwick.

o   2001 University of Washington Department of Physics Henderson Prize (for outstanding Ph.D. thesis).  Awarded to Shuang Meng.

o   2000 University of Washington Bonderman Honors Travel Fellowship.  Awarded to Adrian Fehr.

o   2000-2001 Barry M. Goldwater Fellowship. Awarded to Adrian Fehr.

o   2000 American Vacuum Society Dorothy Hoffman Travel Award.  Awarded to Aaron Bostwick and Jonathan Adams.

o   1998-99 Mary Gates Research Award, University of Washington.  Awarded to Adrian Fehr.

o   1999 American Vacuum Society Dorothy Hoffman Travel Award.  Awarded to Shuang Meng.

o   1998American Vacuum Society Electronic Materials and Processing Division Student Award.  Awarded to Brett Schroeder.

o   1998 American Vacuum Society 20th Applied Surface Analysis and 10th Pacific Northwest Chapter Symposium Student Presentation Award.  Awarded to Brett Schroeder.

o   1995 University of Washington Department of Physics Robert Dahlstrom Prize (for outstanding graduate student in experimental physics).  Awarded to Uwe Hessinger.

o   1994 Materials Research Society Graduate Student Award.  Awarded to Uwe Hessinger.

o   1994 American Vacuum Society Pacific Northwest Chapter Best Student Presentation Award.  Awarded to Uwe Hessinger.

o   1994 American Vacuum Society Electronic Materials and Processing Division Student Award.  Awarded to Michael Leskovar.

o   1990-92 Department of Education National Needs Fellowship.  Awarded to Eli Rotenberg.

o   1988 University of California Presidents' Undergraduate Fellowship for Research.  Awarded to Ali Yazdani.

Professional Activities

o   University of Washington Center for Nanotechnology

Š             Director, Nanotechnology Ph.D. Program (2004 – pr.)

Š             Chair, Nanotechnology Ph.D. Standards Committee and Steering Committee (2001 – pr.)

Š             Principal Investigator Nanotechnology IGERT (2004 – pr.); co-PI (2000 – 2004)

Š             Member, Steering Committee, UW-PNNL Joint Institute for Nanoscience (2004 – 08)

Š             Member, Steering Committee, Molecular Engineering (2006 – 07)

o   University of Washington Diversity Efforts

Š             Member, Center for Institutional Change ADVANCE Leadership Team (2002 – pr.)

Š             Member, Faculty Council for Women in Academia (2005 – pr.)

Š             Member, Graduate Diversity Group (2005 – 08)

Š             Chair, UW Physics Diversity Committee (2005 – 09)

o   American Physical Society (member 1981-; fellow 2003):

Š             Committee on the Status of Women in Physics (1997-99).  Chair 1999.

Š             Maria Goeppert-Mayer Prize Selection Committee (1997).

Š             Davisson-Germer Prize Selection Committee (1994, 1996).

Š             Research at Undergraduate Insititutions Prize Selection Committee (1998-99).  Chair 1999.

Š             Katherine Weimer (Plasma Physics) Award Selection Committee (2005).

Š             Nominating committees:  Materials Division (2004-05); Pacific NW Chapter (2003-05).

o   American Vacuum Society (member 1984-; fellow 1994):

Š             Pacific Northwest Chapter Executive Committee (1994-2000).  Chair 1998-99.

Š             Electronic Materials & Processing Division.  Program (1993-95) and Executive (1995-96) Committees.

Š             Northern California Chapter Surface/Interface Executive Committee (1985-1990).  Co-chair 1985.

o   Synchrotron Users Organization Executive Committees:

Š             Advanced Light Source (1995-96).

Š             Stanford Synchrotron Radiation Laboratory (1986-90).  Chair 1988-89.

o   International Conference Organization:

Š             Gordon Research Conference on Inorganic Thin Films and Interfaces.  Chair 1991.

Š             Applied Surface Analysis.  Co-chair 1998.

Š             Non-contact Atomic Force Microscopy.  Organizing Committee 2004.

Former Doctoral and Post-Doctoral Students and Their Current Situations


o  Tracy Lovejoy (UW Seattle, Physics, PhD August 2010) “III-VI Semiconductors and Oxides: Electronic Structure, Surface Morphology, and Transition Metal Doping of Ga2Se3, In2Se3, and Ga2O3.”

o  Esmeralda Yitamben (UW Seattle, Physics, PhD February 2010) “Quest for the Perfect Dilute Magnetic Semiconductor: Investigation of Cr-doped Ga2 Se3 on Silicon.”  Post-doctoral Fellow, Argonne National Laboratory.

o   Claire Lu (UW Seattle, Materials Science and Engineering, PhD August 2007; co-advise w/ Prof. Fumio Ohuchi) “Group III-Selenides:  New Silicon Compatible Semiconducting Materials For Phase Change Memory Applications.”  Staff Engineer, Intel Corporation, Portland.

o   Ngigi (Isaiah) wa Gatuna (UW Seattle, Materials Science and Engineering, PhD June 2007; co-advise w/ Prof. Fumio Ohuchi) “Intrinsic Vacancy Chalcogenides and Dilute Magnetic Semiconductors:  Theoretical Investigation of Transition Metal Doped Gallium Selenide.”  Kenyan Activist.

o   Diedrich Schmidt (UW Seattle, Physics and Nanotechnology, PhD August 2005) “Titanium Dioxide Thin Films: Understanding Nanoscale Oxide Heteroepitaxy for Silicon-Based Applications.” Postdoctoral Fellow, University of Bochem, Germany.

o   Aaron Bostwick (UW Seattle, Physics, PhD November 2004) " Interaction of Electrons with CaF2 Films on Silicon(111):  Structural and Electronic Changes."  Staff Scientist, Advanced Light Source, Berkeley.

o   Taisuke Ohta (UW Seattle, Materials Science and Engineering and Nanotechnology, PhD August 2004; co-advise w/ Prof. Fumio Ohuchi) “Heteroepitaxy of gallium-selenide on Si(100) and (111): New silicon-compatible semiconductor thin films for nano structure formation.” Staff Scientist, Sandia National Laboratories, Albuquerque.

o   Jonathan Adams (UW Seattle, Physics, PhD August 2004) “A Surface and Interface Study of Aluminum Selenide on Silicon:  Growth and Characterization of Thin Films.”  Investment Risk Analyst, State Street Corporation, London, England. .

o   Andreas Klust  (Fyodor Lynen Postdoctoral Fellow, 2000-2002) Staff Engineer, Bekaert Specialty Films, Belgium.

o   Brett Schroeder (UW Seattle, Physics, PhD December 2000) “Surface Modification Enhanced Semiconductor-on-Insulator Heteroepitaxy.”  Staff Scientist, Intel Corporation, Portland, OR.

o   Shuang Meng (UW Seattle, Physics, PhD December 2000) “Heteroepitaxy of Gallium-Selenide Compounds on Silicon.”  Staff Engineer, Micron Industries, Boise, ID, then returned to China.

o   Michael Leskovar (UW Seattle, Physics, PhD June 1998) “The Stability of Interfaces between Dissimilar Materials.”  Staff Engineer, Boeing Corporation, Kent, WA.

o   Uwe Hessinger (UW Seattle, Physics, PhD March 1996) “Growth Kinetics in Heteroepitaxy.”  Staff Scientist, Lattice Semiconductor Corporation, Hillsboro, OR.

o   Eli Rotenberg (UC Berkeley, Physics, PhD August 1993) “Geometrical Effects in Core-Level Spectroscopy of Insulators.”  Staff Scientist, Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, CA

o   Jonathan Denlinger (UC Berkeley, Physics, PhD January 1993)  “Structural Studies of the Initial Stages of Fluoride Epitaxy on Si and Ge(111).”  Staff Scientist, Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, CA.

 

 

 

Publications

 

82.    "Correlation between Morphology, Chemical Environment, and Ferromagnetism in the Intrinsic-Vacancy Dilute Magnetic Semiconductor Cr-doped Ga2Se3/Si(001)," Esmeralda N. Yitamben, Tracy C. Lovejoy, Alexandre B. Pakhomov, Ezana Negusse, Dario Arena, Fumio S. Ohuchi and Marjorie A. Olmstead, submitted to Physical Review B.

81.    "Room temperature, intrinsic-vacancy mediated ferromagnetism in a silicon-compatible dilute magnetic semiconductor:  Cr:Ga2Se3/Si(001)," Esmeralda N. Yitamben, Tracy C. Lovejoy, Alexandre B. Pakhomov, Steven M. Heald, Fumio S. Ohuchi and Marjorie A. Olmstead, submitted to Physical Review Letters.

80.    "One-dimensional electronic states in Ga2Se3 on Si(001):As," Tracy C. Lovejoy, Esmeralda N. Yitamben, Taisuke Ohta, Samuel C. Fain, Jr., Fumio S. Ohuchi and Marjorie A Olmstead, Physical Review B 81 (2010) 245313.

79.    "Teaching Nanoethics to Graduate Students," Marjorie A. Olmstead and Deborah Bassett, 2009 Nanoethics Graduate Education Symposium Monograph, Nanoethics on the World Wide Web, pp. 131-140 (2009).  Main site: http://depts.washington.edu/ntethics/symposium/index.shtm

78.    "Sputtering induced Co0 Formation in x-ray photoelectron spectroscopy of nanocrystalline ZnCoO spinodal enrichment models," Michael A. White, Tracy C. Lovejoy, Stefan T.Ochsenbein, Marjorie A Olmstead, and Daniel R. Gamelin, Journal of Applied Physics 107 (2010) 103917.

77.      MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001),” T.C. Lovejoy, E.N. Yitamben, S.M. Heald, F.S. Ohuchi and M.A. Olmstead, Applied Physics Letters 95 (2009) 241907.

76.       Surface morphology of Cr:Ga2Se3 heteroepitaxy on Si(001),” Esmeralda N. Yitamben, Tracy C. Lovejoy, Dennis F. Paul, John B. Callaghan, Fumio S. Ohuchi and Marjorie A. Olmstead, Physical Review B 80 075314 (2009).

75.       Surface morphology and electronic structure of bulk single crystal beta-Ga2O3(100)," T. C. Lovejoy, E. N. Yitamben, N. Shamir, J. Morales, E. G. Villora, K. Shimamura, S. Zheng, F. S. Ohuchi, and M. A. Olmstead, Applied Physics Letters 94, 081906 (2009).

74.       Heteroepitaxial Growth of the Intrinsic Vacancy Semiconductor Al2Se3 on Si(111):  Initial Structure and Morphology,” Chih-Yuan Lu, Jonathan A. Adams, Qiuming Yu, Taisuke Ohta, Marjorie A. Olmstead, and Fumio S. Ohuchi, Physical Review B 78, 075321 (2008)

73.       Laser and Electrical Current Induced Phase Transformation of In2Se3:  Semiconductor Thin Film on Si(111),” Chih-Yuan Lu, Patrick J. Shamberger, Esmeralda N. Yitamben, Kenneth M. Beck, Alan G. Joly, Marjorie A. Olmstead, and Fumio S. Ohuchi, Applied Physics A 93, 93-98 (2008).

72.      Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001),” Diedrich. A. Schmidt, Taisuke Ohta, C.-Y. Lu, A.A. Bostwick, Qiuming Yu, E. Rotenberg, F. S. Ohuchi and Marjorie A. Olmstead, Applied Physics Letters, 88 (2006) 181903.

71.      Influence of Perovskite termination in oxide heteroepitaxy,” Diedrich. A. Schmidt, Taisuke Ohta, Qiuming Yu, and Marjorie A. Olmstead, Journal of Applied Physics, 99 (2006) 113521.

70.      Contrast in scanning probe microscopy images of ultra-thin insulator films,” Andreas Klust, Taisuke Ohta, Markus Bierkandt, Carsten Deiter, Qiuming Yu, Joachim Wollschläger, Fumio S. Ohuchi, and Marjorie A. Olmstead,” Applied Physics Letters 88, 063107 (2006).

69.      Electronic structure evolution during the growth of ultra-thin insulator řlms on semiconductors: from interface formation to bulk-like CaF2/Si(111) řlms,” Andreas Klust, Taisuke Ohta, Aaron A. Bostwick, Eli Rotenberg, Qiuming Yu, Fumio S. Ohuchi, and Marjorie A. Olmstead, Physical Review B 72, 204336 (2005).

68.      Chemical passivity of III-VI bilayer terminated Si(111),” Jonathan A. Adams, Aaron A. Bostwick, Fumio S. Ohuchi, and Marjorie A. Olmstead, Applied Physics Letters 87, 171906/1-3 (2005).

67.      Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe,” Jonathan A. Adams, Aaron Bostwick, Taisuke Ohta, Fumio S. Ohuchi, and Marjorie A. Olmstead, Physical Review B 71, 195308 (2005).

66.      Electronic structure of the Si(111):GaSe van der Waals-like surface termination,” Reiner Rudolph, Christian Pettenkofer, Aaron A. Bostwick, Jonathan A. Adams, Fumio S. Ohuchi, Marjorie A. Olmstead, Bengt Jaeckel, Andreas Klein and Wolfram Jaegermann, New Journal of Physics, Focus Issue on Photoemission and Electronic Structure (F. Himpsel and P. -O. Nilsson, eds.), 7, 108 (2005).

65.      Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001),” Taisuke Ohta, D. A. Schmidt, Shuang Meng, Andreas Klust, Aaron Bostwick, Qiuming Yu, Marjorie A. Olmstead, and Fumio S. Ohuchi, Physical Review Letters, 94, 116102 (2005).  Cover photo of March 25, 2005 Issue.

64.      Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy,” Taisuke Ohta, Andreas Klust, Jonathan A. Adams, Qiuming Yu,  Marjorie A. Olmstead and Fumio S. Ohuchi, Physical Review B 69, 125322 (2004).

63.      Atomically resolved imaging of a CaF bilayer on Si(111): subsurface atoms and the image contrast in scanning force microscopy,” A. Klust, T. Ohta, Q. Yu, F. S. Ohuchi and M. A. Olmstead, Physical Review B 69, 34505 (2004).

62.      Issues for Ethnic Minorities and Women in Science and Engineering,” Angela B. Ginorio and Marjorie A. Olmstead, “Women and Scientific Literacy: Building Two-Way Streets,” D. Teraguchi and D.  Humphreys, editors (American Association of Colleges and Universities, 2001).

61.      Low-energy photoelectron diffraction structure determination of  GaSe-bilayer passivated Si(111),”  Shuang Meng, Brett R. Schroeder, Eli Rotenberg, Fumio S. Ohuchi and Marjorie A. Olmstead, Physical Review B 64, 235314 (2001).

60.      Epitaxial growth of laminar crystalline silicon on CaF2,” Brett R. Schroeder, Shuang Meng, Aaron Bostwick, Marjorie A. Olmstead, and Eli Rotenberg, Applied Physics Letters 77, 1289-1291 (2000).

59.      Diffusion of Ge below the Si(100) surface:  Theory and Experiment,” Blas P. Uberuaga, Michael A. Leskovar, Arthur P. Smith, Hannes Jónsson, and Marjorie A. Olmstead, Physical Review Letters, 84, 2441-2444 (2000).

58.      Interaction of Se and GaSe with Si(111),” Shuang Meng, Brett R. Schroeder, and Marjorie A. Olmstead, Physical Review B61, 7215-7218 (2000).

57.      Heteroepitaxy of Disparate Materials:  From Chemisorption to Epitaxy in CaF2/Si(111),” M. A. Olmstead, Chapter 5 of Thin Films:  Heteroepitaxial Systems, Amy W.  K.  Liu and Michael Santos, eds. (World Scientific, 1999).

56.      Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001),” S. Chegwidden, Z. Dai, F. S. Ohuchi and M. A. Olmstead, Journal of Vacuum Science and Technology A16 , 2376-2380 (1998).

55.      Thin Film Growth of II-VI Compound Semiconductors,” Fumio S. Ohuchi and Marjorie A. Olmstead, Encyclopedia of Electrical and Electronics Engineering, John G. Webster, editor (John Wiley & Sons, New York, 1999).

54        Interaction of GaSe with GaAs(111):  Growth of Heterostructures with Large Lattice Mismatch,”  Lee E. Rumaner, Marjorie A. Olmstead and Fumio S. Ohuchi, Journal of Vacuum Science and Technology  B 16, 977-988 (1998).

53.      Altered Photoemission Satellites at CaF2- and SrF2-on-Si(111) Interfaces,” E. Rotenberg, J. D. Denlinger, and M. A. Olmstead, Physical Review B  53, 1584-1593 (1996).

52.      Role of Step and Terrace Nucleation in Heteroepitaxial Growth Morphology:  Growth Kinetics of CaF2/Si(111),” U. Hessinger, M. Leskovar, and M. A. Olmstead, Physical Review Letters 75, 2380-2383 (1995).

51.      Role of Kinetics in the Heteroepitaxial Growth of CaF2 on Si(111):  A Photoelectron Diffraction Study,” J. D. Denlinger, E. Rotenberg, U. Hessinger, M. Leskovar, and M. A. Olmstead, Physical Review B51, 5352-5365 (1995).

50.      Layer-by-Layer Resolved Core level Shifts in CaF2 and SrF2 on Si(111): Theory and Experiment,” E. Rotenberg, J. D. Denlinger, M. Leskovar, U. Hessinger, and M. A. Olmstead, Physical Review B50, 11052-11069 (1994).

49.      Mentoring New Faculty:  Advice to Department Chairs,” M. A. Olmstead, Physics Departments in the 1990s, G. M. Crawley and B. V. Khoury, eds., AAPT Topical Conference Series (American Association of Physics Teachers, 1993) 46-53.  Also published in CSWP Gazette 13(1), 1 (August, 1993).

48.      Kinetic Control of CaF2 on Si(111) Growth Morphology,” J. D. Denlinger, Eli Rotenberg, U. Hessinger, M. Leskovar and Marjorie A. Olmstead, in “Common Themes and Mechanisms of Epitaxial Growth,” edited by P. Fuoss, J. Tsao, D. W. Kisker, A. Zangwill and T. Keuch, Materials Research Society Symposium Proceedings 312, 207-212 (MRS, Pittsburgh, 1993).

47.      Transition from Chemisorption to Epitaxy:  CaF2/Si as a Model Ionic/ Covalent System,” G. C. L. Wong, D. Loretto, E. Rotenberg, M. A. Olmstead, and C. A. Lucas, Physical Review Rapid Communications B48, 5716-5719 (1993).

46.      Surface Core Level Shifts in CaF2-on-Si(111) Films:  Theory and Experiment,” Eli Rotenberg, J. D. Denlinger, U. Hessinger, M. Leskovar and M. A. Olmstead, Journal of Vacuum Science and Technology B11, 1444-1448 (1993).

45.      Variable Growth Modes of CaF2 on Si(111) Determined by X-Ray Photoelectron Diffraction,” J. D. Denlinger, E. Rotenberg, U. Hessinger, M. Leskovar, and M. A. Olmstead, Applied Physics Letters 62, 2057-2059 (1993).

44.      Local Field Corrections to Surface and Interface Core Level Shifts in Insulators,” E. Rotenberg and M. A. Olmstead, Physical Review Rapid Communications B46, 12884-12887 (1992).

43.      Atomic-size Effects on the Growth of SrF2 and (Ca,Sr)F2 on Si(111),” J. D. Denlinger, E. Rotenberg, M. A. Olmstead, J. R. Patel, and E. Fontes, Physical Review Rapid Communi­cations B43, 7335-7338 (1991).

42.      Atomic and Electronic Structure at Lattice Mismatched Semiconductor Insulator Interfaces,” M. A. Olmstead, J. D. Denlinger, E. Rotenberg, R. D. Bringans, J. R. Patel, E. Fontes, in 20th International Conference on the Physics of Semiconductors – Volume I, E. M. Anastassakis and J. D. Joannopoulos, eds. (World Scientific, 1990) 103-106.

41.      Semiconductor Surfaces and Interfaces Studied with Synchrotron Radiation,” R. Z. Bachrach, R. D. Bringans and M. A. Olmstead, in Lattice Dynamics and Semiconductor Physics:  Festschrift for Professor Kun Huang (World Scientific Publishing Co., Singapore, 1990) pp. 285-334.

40.      The Role of Lattice Mismatch and Surface Chemistry in the Formation of Epitaxial Semi­conductor–Insulator Inter­faces,” M. A. Olmstead and R. D. Bringans, Physical Review B41, 8420–8430 (1990).

39.      Initial Stages of Semiconductor-Insulator Heterointerface Formation,”   M. A. Olmstead and R. D. Bringans, Journal of Electron Spectroscopy and Related Phenomena 51, 599-612 (1990).

38.      Synchrotron Radiation Studies of Surface and Interfaces using In-situ Materials Prepara­tion,” R. Z. Bachrach, R. D. Bringans and M. A. Olmstead, Current Trends in the Physics of Materials, Italian Physical Society Proceedings, International School of Physics Enrico Fermi- Course CVI. (1990).

37.      Comparison of Interface Formation for GaAs-on-Si and ZnSe-on-Si,” R. D. Bringans and M. A. Olmstead, Proceedings of the Materials Research Society  145, 337–342 (1989).

36.      The Bonding of Se and ZnSe to the Si(100) Surface,” R. D. Bringans and M. A. Olmstead, Physical Review Rapid Communications B39, 12985-12988 (1989).

35.      The Bonding of As and Se to Silicon Surfaces,” R. D. Bringans and M. A. Olm­stead, Journal of Vacuum Science and Technology B7, 1232–1235 (1989).

34.      Electronic and Atomic Structure of GaAs Epitaxial Overlayers on Si(111),” J. E. Northrup, R. I. G. Uhrberg, R. D. Bringans, M. A. Olmstead, and R. Z. Bachrach, Physical Review Letters 61, 2957-2960 (1988).

33.      Electronic and Structural Constraints in Epitaxial Semiconductor-Insulator Inter­faces,” M. A. Olmstead and R. D. Bringans, Proceedings of the XIXth Inter­national Conference on the Physics of Semiconductors, W. Zawadzki, ed., (Polish Academy of Sciences, Warsaw, 1988) pp. 619-622.

32.      The Effect of a Ga Prelayer on the Beginning of GaAs Epitaxy on Si,” R. D. Bringans, M. A. Olmstead, F. A. Ponce, D. K. Biegelsen, B. S. Krusor and R. D. Yingling, Journal of Applied Physics 64, 3472-3475 (1988).

31.      The Influence of Substrate Surface Chemistry on GaAs–on–Si Growth,” R. D. Bringans, M. A. Olmstead, F. A. Ponce, D. K. Biegelsen, B. S. Krusor and R. D. Yingling, Proceedings of the Materials Research Society 116, 51-56 (1988).

30.      Chemical Bonding and Lattice Mismatch in Semiconductor Insulator Hetero­epitaxy: SrF2 on Si(111),” M. A. Olmstead and R. D. Bringans, Proceedings of the Materials Research Society 116, 419-424 (1988).

29.      The Bonding of Arsenic to the Hydrogen Terminated Si(111) Surface,” R. D. Bringans and M. A. Olmstead, Journal of Vacuum Science and Technology  B6, 1132–1136 (1988).

28.      Interface Formation of GaAs with Si(100), Si(111) and Ge(111):  Core Level Spectro­scopy for Monolayer Coverages of GaAs, Ga and As,” R. D. Bringans, M. A. Olmstead, R. I. G. Uhrberg and R. Z. Bachrach, Physical Review B36, 9569–9580 (1987).

27.      The Formation of the Interface Between GaAs and Si:  Implications for GaAs-on-Si Heteroepitaxy,” R. D. Bringans, M. A. Olmstead, R. I. G. Uhrberg and R. Z. Bachrach, Applied Physics Letters 51, 523-525 (1987).

26.      Synchrotron Radiation Studies of MBE Formed Semiconductor Interfaces:  Si–GaAs and GaAs–Si,” R. Z. Bachrach, R. D. Bringans, M. A. Olmstead and R. I. G. Uhrberg, Modern Physics Letters B1, 97–110 (1987).  Also pub­lished in Asia Pacific Symposium on Surface Physics, Xie Xide, ed. (World Scientific, 1987) pp. 1–13.

25.      GaAs-on-Si Epitaxy:  Results for Coverage of ~1 Monolayer,” R. D. Bringans, M. A. Olmstead, R. I. G. Uhrberg and R. Z. Bachrach, Proceedings of the Materials Research Society  94, 201–206 (1987).

24.      Bonding at the CaF2-on-Si(111) Interface,” M. A. Olmstead, R. I. G. Uhrberg, R. D. Bringans, R. Z. Bachrach, Proceedings of the Materials Research Soci­ety 94, 195–200 (1987).

23.      Photoemission Study of Bonding at the CaF2–Si(111) Interface,” M. A. Olmstead, R. I. G. Uhrberg, R. D. Bringans and R. Z. Bachrach, Physical Review B35, 7526–7532 (1987).

22.      Surface Structure and Interface Formation of Si on GaAs(100),” R. Z. Bachrach, R. D. Bringans, M. A. Olmstead and R. I. G. Uhrberg, Journal of Vacuum Science and Tech­nology B5, 1135–1140 (1987).

21.      Electronic Structure, Atomic Structure and the Passivated Nature of the Arsenic-Termi­nated Si(111) Surface,” R. I. G. Uhrberg, R. D. Bringans, M. A. Olm­stead, R. Z. Bachrach and J. E. Northrup, Physical Review B35, 3945–3951 (1987).

20.      Core-level Spectroscopy of the GaAs-on-Si Interface,” R. D. Bringans, M. A. Olmstead, R. I. G. Uhrberg and R. Z. Bachrach, Journal of Vacuum Science and Technology  A5, 2141–2142 (1987).

19.      Optical Properties and Atomic Structure of Cleaved Silicon and Germanium (111) Sur­faces,” M. A. Olmstead, Surface Science Reports 8, 159–252 (1987).

18.      Model Semiconductor Surfaces:  Arsenic Termination of the Ge(111), Si(111) and Si(100) Surfaces,” R. D. Bringans, R. I. G. Uhrberg, M. A. Olmstead, R. Z. Bachrach and J. E. Northrup, Physica Scripta T17, 7 (1987).

17.      Arsenic Passivation of the Si(111) Surface,” R. I. G. Uhrberg, R. D. Bringans, M. A. Olmstead and R. Z. Bachrach, Proceedings of the XVIIIth International Conference on the Physics of Semiconductors, O. Engström, ed. (World Scientific, 1987) pp. 89–92.

16.      Core Level Study of Bonding at the GaAs–on–Si Interface,” R. D. Bringans, M. A. Olmstead, R. I. G. Uhrberg, R. Z. Bachrach and J. E. Northrup, Pro­ceedings of the XVIIIth International Conference on the Physics of Semicon­ductors, O. Engström, ed. (World Scientific, 1987) pp. 191–194.

15.      The Interface Between and Covalent Semiconductor and an Ionic Insulator: CaF2 on Si(111),” M. A. Olmstead, R. I. G. Uhrberg, R. D. Bringans and R. Z. Bachrach, Proceedings of the XVIIIth International Conference on the Physics of Semiconductors, O. Engström, ed. (World Scientific, 1987) pp. 255–258.

14.      Initial Formation of the Interface Between a Polar Insulator and a Non-Polar Semi­conductor:  CaF2 on Si(111),” M. A. Olmstead, R. I. G. Uhrberg, R. D. Bringans and R. Z. Bachrach, Journal of Vacuum Science and Technology  B4, 1123–1127 (1986).

13.      Surface Bands for Single-Domain 2ę1 Reconstructed Si(100) and Si(100):As.  Photo­emission Results for Off-Axis Crystals,” R. D. Bringans, R. I. G. Uhrberg, M. A. Olm­stead and R. Z. Bachrach, Physical Review Rapid Communications B34, 7447–7450 (1986).

12.      Arsenic Overlayer on Si(111):  Removal of Surface Reconstruction,” M. A. Olm­stead, R. I. G. Uhrberg, R. D. Bringans and R. Z. Bachrach, Physical Re­view Rapid Communica­tions B34, 6401–6405 (1986).

11.      Theory of the Temperature Dependence of Si(111) 2ę1 Surface State Optical Absorp­tion,” M. A. Olmstead and D. J. Chadi, Physical Review B33, 8402–8409 (1986).

10.      Temperature Dependence of Surface State Optical Absorption,” M. A. Olmstead and D. J. Chadi, Journal of Vacuum Science and Technology A4, 1278–1279 (1986).

9.         Temperature Dependence of the Si and Ge (111) 2ę1 Surface State Optical Ab­sorption,” M. A. Olmstead and N. M. Amer, Physical Review B33, 2564–2573 (1986).

8.         Optical Properties and Atomic Structure of Cleaved Silicon and Germanium (111) Sur­faces as Determined by Photothermal Displacement Spectroscopy,” M. A. Olmstead, Ph.D. Dissertation, Department of Physics, University of California at Berkeley (1985).

7.         Polarization Dependent Ge and Si (111) 2ę1 Surface State Optical Absorption:  A Test of Surface Reconstruction Models,” M. A. Olmstead and N. M. Amer, Proceedings of the XVIIth International Conference on the Physics of Semi­conductors, D. J. Chadi and W. A. Harrison, eds. (Springer, 1985) pp. 21–26.

6.         Polarization Dependence of Ge (111) 2ę1 Surface State Absorption Using Pho­to­thermal Displacement Spectroscopy:  A Test of Surface Reconstruction Mod­els,” M. A. Olmstead and N. M. Amer, Physical Review B29, 7048–7050 (1984).

5.         Polarization Dependence of Si (111) 2ę1 Surface Optical Absorption Using Photo­thermal Displacement Spectroscopy,” M. A. Olmstead and N. M. Amer, Physical Review Letters 52, 1148–1151 (1984).

4.         Photothermal Displacement Spectroscopy:  An Optical Probe for Solids and Sur­faces,” M. A. Olmstead, N. M. Amer, S. E. Kohn, D. Fournier and A. C. Boccara, Applied Physics A32, 141–154 (1983).

3.         A New Probe of the Optical Properties of Surfaces,” M. A. Olmstead and N. M. Amer, Journal of Vacuum Science and Technology  B1, 751–755 (1983).

2.         Electron-Hole Plasma in Photoexcited Indirect Gap AlxGa1-xAs,” E. Cohen, M. D. Sturge, M. A. Olmstead and R. A. Logan, Physical Review B22, 771–777 (1980).

1.         Multidielectrics for GaAs Devices Using Composition Graded AlxGa1-xAs and Oxidized AlAs,” W. T. Tsang, M. A. Olmstead and R. P. H. Chang, Applied Physics Letters 34, 408–410 (1979).